dpg 120 c 300qb advanced hiperfred symbol definition r a t i n g s features / advantages: planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch typ. max. i fsm i r a a v 550 i fav a v f 1.40 r thjc 0.55 k/w v r = 123 min. 60 ms (50 hz), sine applications: antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) v rrm v 300 1 t vj v c = t vj c = ma 0.35 package: part number v r = t vj = c i f =a v t c =125c rectangular, d = 0.5 p tot 275 w t c c = a i rm 3 /dt i f =a; v r =v a t rr e as tbd mj t vj c = i as =a;l = h i ar a v a = tbd f = 10 khz 1.5v r typ.; t vj 175 c -55 high performance fast recovery diode low loss and soft recovery common cathode v i t rrm fav rr = = = 300 60 35 60 t vj =45c 60 -di f = 200 a/s 100 100 dpg 120 c 300qb v a ns 300 v 300 25 25 25 t p =10 25 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current max. reverse recovery current non-repetitive avalanche energy repetitive avalanche current reverse recovery time conditions unit (marking on product) 1.72 t vj c = 25 c j pf j unction capacitance v r =v; 150 t vj 150 v f0 v 0.69 t vj =175c r f 5.8 ? f = 1 mhz =c 25 m to-3p v 1.10 t vj =c i f =a v 60 150 1.45 i f =a 120 i f =a 120 ns 35 ns industry standard outline - compatible with to-247 epoxy meets ul 94v-0 rohs compliant t vj c =25 t vj c =125 t vj c =25 t vj c =125 2x threshold voltage slope resistance for power loss calculation only ixys reserves the right to change limits, conditions and dimensions. ? 2006 ixys all rights reserved 0614 * data according to iec 60747and per diode unless otherwise specified
dpg 120 c 300qb advanced i rms a per pin* 70 r thch k/w 0.25 m d nm 1.2 mounting torque 0.8 t stg c 150 storage temperature -55 weight g 5 max d1 ?p s ?p1 l l1 e1 e e b2 c d b4 b a2 a a1 min sym min max symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit * irms is typically limited by: 1. pin-to-chip resi stance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a no n-isolated backside, the whole current capability can be used by c onnecting the backside. outlines to-3p f c n 120 mounting force with clip 20 ixys reserves the right to change limits, conditions and dimensions. ? 2006 ixys all rights reserved 0614 * data according to iec 60747and per diode unless otherwise specified
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